Diodes DMN6040SK3 User Manual
Page 4
DMN6040SK3
Document number: DS35733 Rev. 5 - 2
4 of 6
June 2014
© Diodes Incorporated
DMN6040SK3
- 50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 On-Resistance Variation with Temperature
J
°
0
0.02
0.04
0.06
0.08
0.10
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
TA
N
C
E (
)
DS
(O
N)
Ω
V
= 4.5V
I = 500mA
GS
D
V
=
V
I = 200mA
GS
D
2.5
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
J
°
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
I = 1mA
D
I = 250µA
D
0
0.2
0.4
0.6
0.8
1.0
1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 9 Diode Forward Voltage vs. Current
0
4
8
12
16
20
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(V
)
S
T = 25°C
A
0
5
10
15
20
25
30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Junction Capacitance
C
,
JU
NC
T
IO
N
CA
P
A
C
IT
A
N
C
E (
p
F
)
T
C
iss
C
oss
C
rss
f = 1MHz
0
5
10
15
20
25
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
Q
(nC)
g
, TOTAL GATE CHARGE
Fig. 11 Gate Charge
V
= 30V
I =
A
DS
D
4.3
V , DRAIN-SOURCE VOLTAGE (V)
Fig 12 SOA, Safe Operation Area
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(ON)
0.01
0.1
1
10
100
0.1
1
10
100
T
= 150°C
T = 25°C
V
= 10V
Single Pulse
J(max)
A
GS
DUT on 1 * MRP Board
DC
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 1µs
W
P = 10µs
W