Dmn601wk, Maximum ratings, Thermal characteristics – Diodes DMN601WK User Manual
Page 2: Electrical characteristics
DMN601WK
Document number: DS30653 Rev. 5 - 2
2 of 5
September 2013
© Diodes Incorporated
DMN601WK
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
60
V
Gate-Source Voltage
V
GSS
±20 V
Drain Current (Note 5)
Continuous
Pulsed (Note 6)
I
D
300
800
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
200
mW
Thermal Resistance, Junction to Ambient
R
JA
625
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-65 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60
V
V
GS
= 0V
,
I
D
= 10µA
Zero Gate Voltage Drain Current
I
DSS
1.0
µA
V
DS
= 60V,
V
GS
= 0V
Gate-Source Leakage
I
GSS
±10
µA
V
GS =
±20V,
V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0
1.6
2.5
V
V
DS
= 10V, I
D
=
1mA
Static Drain-Source On-Resistance
R
DS(ON)
2.0
3.0
V
GS =
10V, I
D
= 0.5A
V
GS
= 4.5V, I
D
= 0.2A
Forward Transfer Admittance
|Y
fs
|
80
ms
V
DS
= 10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
50
pF
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
25
pF
Reverse Transfer Capacitance
C
rss
5.0
pF
Notes:
5. Device mounted on FR-4 PCB.
6. Pulse width
10µS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.