Diodes DMN601TK User Manual
Dmn601tk, Features, Mechanical data
DMN601TK
Document number: DS30654 Rev. 5 - 2
1 of 4
www.diodes.com
March 2009
© Diodes Incorporated
DMN601TK
N-CHANNEL
Features
•
Low On-Resistance: R
DS(ON)
•
Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Lead Free By Design/RoHS Compliant (Note 2)
•
ESD Protected Up To 2kV
•
"Green" Device (Note 4)
Mechanical Data
• Case:
SOT-523
•
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals:
Finish
⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
•
Terminal Connections: See Diagram
•
Marking Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 0.002 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
60
V
Gate-Source Voltage
V
GSS
±20 V
Drain Current (Note 1)
Continuous
Pulsed (Note 3)
I
D
300
800
mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 1)
P
D
150
mW
Thermal Resistance, Junction to Ambient
R
θJA
833
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
60
⎯
⎯
V
V
GS
= 0V, I
D
= 10
μA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
1.0
μA V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±10
μA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
1.0
1.6
2.5
V
V
DS
= 10V, I
D
= 1mA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
⎯
2.0
3.0
Ω
V
GS
= 10V, I
D
= 0.5A
V
GS
= 5V, I
D
= 0.05A
Forward Transfer Admittance
|Y
fs
|
80
⎯
⎯
ms
V
DS
=10V, I
D
= 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
⎯
50
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
⎯
25
pF
Reverse Transfer Capacitance
C
rss
⎯
⎯
5.0
pF
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width
≤10μS, Duty Cycle ≤1%
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
SOT-523
TOP VIEW
TOP VIEW
Pin Out Configuration
ESD Protected up to 2kV
Source
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Gate
Drain
G
S
D