Diodes DMN5L06DMK User Manual
Dmn5l06dmk new prod uc t, Features, Mechanical data
DMN5L06DMK
Document number: DS30927 Rev. 4 - 2
1 of 4
www.diodes.com
September 2007
© Diodes Incorporated
DMN5L06DMK
NEW PROD
UC
T
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
•
Dual N-Channel MOSFET
•
Low On-Resistance
•
Very Low Gate Threshold Voltage (1.0V max)
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Small Surface Mount Package
•
Lead Free By Design/RoHS Compliant (Note 2)
•
ESD Protected up to 2kV
•
"Green" Device (Note 4)
•
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
•
Case: SOT-26
•
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020C
•
Terminal Connections: See Diagram
•
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 4
•
Ordering Information: See Page 4
•
Weight: 0.015 grams (approximate)
S
1
D
1
D
2
S
2
G
1
G
2
SOT-26
ESD protected up 2kV
TOP VIEW
BOTTOM VIEW
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Internal Schematic
TOP VIEW
Characteristic
Symbol
Value
Unit
Drain Source Voltage
V
DSS
50
V
Gate-Source Voltage
V
GSS
±20
V
Drain Current (Note 1)
Continuous
Pulsed (Note 3)
I
D
305
800
mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 1)
P
D
400
mW
Thermal Resistance, Junction to Ambient
R
θJA
313
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-65 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
50
⎯
⎯
V
V
GS
= 0V, I
D
= 10
μA
Zero Gate Voltage Drain Current
@ T
C
= 25°C
I
DSS
⎯
⎯
60
nA
V
DS
= 50V, V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯
⎯
1
500
50
μA
nA
nA
V
GS
= ±12V, V
DS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
0.49
⎯
1.0
V
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
⎯
⎯
⎯
⎯
3.0
2.5
2.0
Ω
V
GS
= 1.8V, I
D
= 50mA
V
GS
= 2.5V, I
D
= 50mA
V
GS
= 5.0V, I
D
= 50mA
On-State Drain Current
I
D(ON)
0.5
1.4
⎯
A
V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance
|Y
fs
|
200
⎯
⎯
mS
V
DS
=10V, I
D
= 0.2A
Source-Drain Diode Forward Voltage
V
SD
0.5
⎯
1.4 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
⎯
50
pF
Output Capacitance
C
oss
⎯
⎯
25
pF
Reverse Transfer Capacitance
C
rss
⎯
⎯
5.0
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width
≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.