Diodes DMN53D0LW - Manual (Page 2)

DMN53D0LW
Document number: DS36579 Rev. 2 - 2
2 of 5
www.diodes.com
November 2013
© Diodes Incorporated
DMN53D0LW
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
50 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
360
250
mA
Continuous Drain Current (Note 6) V
GS
= 5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
250
200
mA
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
700 mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation
(Note 5)
P
D
320
mW
(Note 6) 420
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
395
°C/W
(Note 6) 301
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
50   V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
  1.0 µA V
DS
= 50V, V
GS
= 0V
Gate-Body Leakage I
GSS
  ±10 µA V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(TH)
0.8  1.5 V V
DS
= V
GS
, I
D
= 100µA
Gate Threshold Voltage Temperature Coefficient (Note 8)
J
GS(TH)
T
V


 -3.4  mV/°C —
Static Drain-Source On-Resistance R
DS (ON)
  2.0
Ω
V
GS
= 10V, I
D
= 270mA
  3.0 V
GS
= 5V, I
D
= 200mA
Forward Transconductance g
FS
80   mS V
DS
= 10V, I
D
= 200mA
Diode Forward Voltage V
SD
— 0.75  1.2  V V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
 45.8 
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 5.3 
Reverse Transfer Capacitance C
rss
 3.9 
Total Gate Charge V
GS
= 10V Q
g
 1.2 
nC
V
GS
= 10V, V
DS
= 10V,
I
D
= 250mA
Total Gate Charge V
GS
= 4.5V Q
g
 0.6 
Gate-Source Charge Q
gs
 0.2 
Gate-Drain Charge Q
gd
 0.1 
Turn-On Delay Time t
D(on)
 2.7 
nS
V
DD
= 30V, V
GS
= 10V,
R
G
= 25Ω, I
D
= 200mA
Turn-On Rise Time t
r
 2.5 
Turn-Off Delay Time t
D(off)
 18.9 
Turn-Off Fall Time t
f
 11.0 
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.