Diodes DMN5/L06VK/L06VAK/010VAK - Manual (Page 2)

DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 11 - 2
2 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMN5/L06VK/L06VAK/010VAK
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain Source Voltage V
DSS
50 V
Drain-Gate Voltage R
GS
≤ 1.0MΩ V
DGR
50 V
Gate-Source Voltage Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current (Note 6) Continuous
Pulsed
I
D
I
DM
280
1.5
mA
A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) P
D
250 mW
Thermal Resistance, Junction to Ambient (Note 6) R
θJA
500 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
50 — — V V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current @ T
C
= +25°C I
DSS
— — 60 nA V
DS
= 50V, V
GS
= 0V
Gate-Body Leakage I
GSS
— —
1
500
50
µA
nA
nA V
GS
= ±12V, V
DS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage @T
J
= +25°C
@T
J
= +0°C~ +85°C (Note 8)
V
GS(th)
0.49
0.30
—
1.0
1.2
V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS (ON)
—
—
— —
—
— 3.0
2.5
2.0
Ω
V
GS
= 1.8V, I
D
= 50mA
V
GS
= 2.5V, I
D
= 50mA
V
GS
= 5.0V, I
D
= 50mA
On-State Drain Current I
D(ON)
0.5 1.4 — A V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance |Y
fs
| 200 — — mS V
DS
=10V, I
D
= 0.2A
Source-Drain Diode Forward Voltage V
SD
0.5 — 1.4 V V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— — 50 pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
— — 25 pF
Reverse Transfer Capacitance C
rss
— — 5.0 pF
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.