Maximum ratings, Thermal characteristics – Diodes DMN4036LK3 User Manual
Page 2
DMN4036LK3
Document number: DS32122 Rev. 2 - 2
2 of 8
March 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN4036LK3
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Drain-Source voltage
V
DSS
40 V
Gate-Source voltage
(Note 2)
V
GS
±20
V
Continuous Drain current
V
GS
= 10V
(Note 4)
I
D
12.2
A
T
A
= 70
°C (Note 4)
9.7
(Note 3)
8.5
Pulsed Drain current
V
GS
= 10V
(Note 5)
I
DM
31.7 A
Continuous Source current (Body diode)
(Note 4)
I
S
10.4 A
Pulsed Source current (Body diode)
(Note 5)
I
SM
31.7 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Power dissipation
Linear derating factor
(Note 3)
P
D
4.12
33
W
mW/
°C
(Note 4)
8.49
67.9
(Note 6)
2.12
16.9
Thermal Resistance, Junction to Ambient
(Note 3)
R
θJA
30.3
°C/W
(Note 4)
14.7
(Note 6)
59.0
Thermal Resistance, Junction to Lead
(Note 7)
R
θJL
3.1
Operating and storage temperature range
T
J
, T
STG
-55 to 150
°C
Notes:
2. AEC-Q101 V
GS
maximum is ±16V.
3. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note 3, except the device is measured at t
≤ 10 sec.
5. Same as note 3, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).