Diodes DMN4040SK3 - Manual (Page 2)

DMN4040SK3
Document number: DS32043 Rev. 2 - 2
2 of 6
www.diodes.com
October 2010
© Diodes Incorporated
DMN4040SK3
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
40 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 4) V
GS
= 10V
Steady
State
T
A
= 25°C
T A = 70°C
I
D
6.0
4.8
A
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
9.3
7.4
A
Continuous Drain Current (Note 5) V
GS
= 10V t ≤ 10s
T
A
= 25°C
T
A
= 70°C
I
D
13.8
11.0
A
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
6.9
5.5
A
Continuous Drain Current (Note 5) V
GS
= 4.5V t
≤ 10s
T
A
= 25°C
T
A
= 70°C
I
D
10.3
8.2
A
Pulsed Drain Current (Note 6) I DM
50 A
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 4) P
D
1.71 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 4) R θJA 72.9 °C/W
Power Dissipation (Note 5) P
D
4.1 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 5) R θJA 30.8 °C/W
Power Dissipation (Note 5) t
≤ 10s
P
D
8.9 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 5) t ≤ 10s R
θJA 14 °C/W
Operating and Storage Temperature Range T J , T STG
-55 to +150 °C
Electrical Characteristics
@ T
A
= 25°C unless otherwise stated
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
40 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 1.0 μA
V
DS
= 40V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.8 2.3 3.0 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
- 20 30
mΩ
V
GS
= 10V, I
D
= 12A
- 43 54 V
GS
= 4.5V, I
D
= 6A
Forward Transfer Admittance |Y
fs
| - 11 - S V
DS
= 5V, I
D
= 12A
Diode Forward Voltage V
SD
- 0.76 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 945 -
pF
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 69 -
Reverse Transfer Capacitance C
rss
- 58 -
Gate Resistance R
g
- 1.45 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge V
GS
= 4.5V Q
g
- 8.4 -
nC
V
GS
= 4.5V, V
DS
= 20V, I
D
= 12A
Total Gate Charge V
GS
= 10V Q
g
- 18.6 -
V
GS
= 10V, V
DS
= 20V,
I
D
= 12A
Gate-Source Charge Q
gs
- 3.3 -
Gate-Drain Charge Q
gd
- 2.2 -
Turn-On Delay Time t D(on)
- 6.4 - ns
V GS = 10V, V DS = 20V,
R L = 1.6 Ω, R
G = 3 Ω
Turn-On Rise Time t
r
- 9.7 - ns
Turn-Off Delay Time t
D(off)
- 19.8 - ns
Turn-Off Fall Time t f
- 3.1 - ns
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.