Diodes DMN4031SSD User Manual
Page 4
DMN4031SSD
Document number: DS35410 Rev. 4 - 2
4 of 6
February 2014
© Diodes Incorporated
DMN4031SSD
ADVAN
CE I
N
F
O
RM
ATI
O
N
0
0.5
1.0
1.5
2.0
2.5
3.0
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E(
V
)
GS
(T
H
)
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
1.0
1.2
V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
10
100
1,000
10,000
0
5
10
15
20
25
30
35
40
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
C
oss
C
rss
C
iss
f = 1MHz
1
10
100
1,000
0
10
20
30
V , DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
I
, L
EAKA
G
E
C
U
R
R
EN
T
(µ
A
)
DS
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
0
2
4
6
8
10
0
2
4
6
8
10 12 14
16 18 20
Q , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
g
V,
G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
f = 1MHz
0.01
0.1
1
10
100
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
0.001
0.1
1
10
100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10µs
W