Dmn4027ssd, Electrical characteristics – Diodes DMN4027SSD User Manual
Page 4
DMN4027SSD
Document Number DS33040 Rev 2 - 2
4 of 8
April 2013
© Diodes Incorporated
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
DMN4027SSD
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
40
V
I
D
= 250µA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
0.5 µA
V
DS
= 40V, V
GS
= 0V
Gate-Source Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1.0
3.0 V
I
D
= 250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 12)
R
DS(ON)
0.017 0.027
Ω
V
GS
= 10V, I
D
= 7A
0.031 0.047
V
GS
= 4.5V, I
D
= 6A
Forward Transconductance (Notes 12 & 13)
g
fs
22.8
S
V
DS
= 15V, I
D
= 7A
Diode Forward Voltage (Note 12)
V
SD
0.86 1.1 V
I
S
= 7A, V
GS
= 0V
Reverse recovery time (Note 13)
t
rr
12.1
ns
I
S
= 2.1A, di/dt = 100A/µs
Reverse recovery charge (Note 13)
Q
rr
5.1
nC
DYNAMIC CHARACTERISTICS (Note 13)
Input Capacitance
C
iss
604
pF
V
DS
= 20V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
106
pF
Reverse Transfer Capacitance
C
rss
59.6
pF
Total Gate Charge (Note 14)
Q
g
6.3
nC
V
GS
= 4.5V
V
DS
= 20V
I
D
= 7A
Total Gate Charge Note 14)
Q
g
12.9
nC
V
GS
= 10V
Gate-Source Charge Note 14)
Q
gs
2.4
nC
Gate-Drain Charge Note 14)
Q
gd
3.3
nC
Turn-On Delay Time Note 14)
t
D(on)
3.1
ns
V
DD
= 20V, V
GS
= 10V
I
D
= 1A, R
G
6.0
Turn-On Rise Time Note 14)
t
r
3.1
ns
Turn-Off Delay Time (Note 14)
t
D(off)
15.4
ns
Turn-Off Fall Time Note 14)
t
f
7.5
ns
Notes:
12. Measured under pulsed conditions. Pulse width
300µs; duty cycle 2%.
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.