Dmn4468lss new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMN4468LSS User Manual
Page 2: Electrical characteristics, Dmn4468lss

DMN4468LSS
Document number: DS31773 Rev. 5 - 2
2 of 6
October 2013
© Diodes Incorporated
DMN4468LSS
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
10
9
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
50 A
Thermal Characteristics
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
1.52 W
Thermal Resistance, Junction to Ambient (Note 5)
R
JA
82 °C/W
Thermal Resistance, Junction to Case (Note 6)
R
Jc
8.2 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
— — 1.0 μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
1.05 — 1.95 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
—
11
15
14
20
mΩ
V
GS
= 10V, I
D
= 11.6A
V
GS
= 4.5V, I
D
= 10A
Forward Transfer Admittance
|Y
fs
|
— 8 — S
V
DS
= 5V, I
D
= 11.6A
Diode Forward Voltage
V
SD
— 0.73 0.95 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
— 867 — pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 85 — pF
Reverse Transfer Capacitance
C
rss
— 81 — pF
Gate Resistance
R
g
— 1.39 — Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
— 18.85 — nC
V
GS
= 10V, V
DS
= 15V,
I
D
=11.6A
Gate-Source Charge
Q
gs
— 2.59 — nC
Gate-Drain Charge
Q
gd
— 6.15 — nC
Turn-On Delay Time
t
D(on)
— 5.46 — ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 1.3Ω, R
G
= 3Ω, I
D
= 1A
Turn-On Rise Time
t
r
— 14.53 — ns
Turn-Off Delay Time
t
D(off)
— 18.84 — ns
Turn-Off Fall Time
t
f
— 6.01 — ns
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.