Diodes DMN3730UFB - Manual (Page 2)

DMN3730UFB
Document number: DS35018 Rev. 3 - 2
2 of 6
www.diodes.com
March 2011
© Diodes Incorporated
DMN3730UFB
A Product Line of
Diodes Incorporated
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V DSS
30
V
Gate-Source Voltage V
GSS
±8
Continuous Drain Current V
GS
= 4.5V
(Note 5)
I
D
0.91
A T
A
=70°C (Note 5) 0.73
(Note 4) 0.75
Pulsed Drain Current (Note 6) I DM
3 A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation
(Note 5)
P D
0.69
W
(Note 4) 0.47
Thermal Resistance, Junction to Ambient
(Note 5)
R θJA
180
°C/W
(Note 4) 258
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
30 - - V V
GS
= 0V, I
D
= 10 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 1 μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - 3 μA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
0.45 - 0.95 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance (Note 7) R
DS (ON)
- -
460
mΩ
V GS = 4.5V, I D = 200mA
560 V
GS
= 2.5V, I
D
= 100mA
730 V
GS
= 1.8V, I
D
= 75mA
Forward Transfer Admittance |Y
fs
| 40 - - mS V
DS
= 3V, I
D
= 10mA
Diode Forward Voltage (Note 7) V
SD
- 0.7 1.2 V V
GS
= 0V, I
S
= 300mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 64.3 - pF
V DS = 25V, V GS = 0V,
f = 1.0MHz
Output Capacitance C
oss
- 6.1 - pF
Reverse Transfer Capacitance C
rss
- 4.5 - pF
Gate Resistance R
g
- 70 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
- 1.6 - nC
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 1A
Gate-Source Charge Q
gs
- 0.2 - nC
Gate-Drain Charge Q
gd
- 0.2 - nC
Turn-On Delay Time t
D(on)
- 3.5 - ns
V
DS
= 10V, I
D
= 1A
V
GS
= 10V, R
G
= 6Ω
Turn-On Rise Time t
r
- 2.8 - ns
Turn-Off Delay Time t
D(off)
- 38 - ns
Turn-Off Fall Time t f
- 13 - ns
Notes: 4. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in
steady-state condition.
5. Same as note 4, except the device measured at t
≤ 10 sec.
6. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10 μs.
7. Measured under pulsed conditions to minimize self-heating effect. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.