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Diodes DMN32D2LDF User Manual

Dmn32d2ldf, Features, Mechanical data

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DMN32D2LDF

COMMON SOURCE DUAL N-CHANNEL

ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

Common Source Dual N-Channel MOSFET

Low On-Resistance

Very Low Gate Threshold Voltage, 1.2V max

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Small Surface Mount Package

ESD Protected Gate

Lead Free By Design/RoHS Compliant (Note 2)

"Green" Device (Note 3)

Qualified to AEC-Q 101 Standards for High Reliability

Mechanical Data

Case: SOT-353

Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminal Connections: See Diagram

Terminals: Finish – Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.006 grams (approximate)

NEW PRODUCT

G

1

D

1

G

2

D

2

S

Q

1

Q

2

G

2

S

G

1

D

2

D

1

SOT-353

ESD PROTECTED






TOP VIEW

BOTTOM VIEW

Schematic Diagram

TOP VIEW

Maximum Ratings Q

1

, Q

2

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Unit

Drain Source Voltage

V

DSS

30 V

Gate-Source Voltage

V

GSS

±10

V

Drain Current (Note 1)

I

D

400 mA

Thermal Characteristics

Q

1

, Q

2

@T

A

= 25°C unless otherwise specified

Total Power Dissipation (Note 1)

P

D

280 mW

Thermal Resistance, Junction to Ambient (Note 1)

R

θJA

446

°C/W

Operating and Storage Temperature Range

T

j

, T

STG

-55 to +150

°C

Electrical Characteristics Q

1

, Q

2

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage

BV

DSS

30

V

V

GS

= 0V, I

D

= 250

μA

Zero Gate Voltage Drain Current

@ T

C

= 25°C

I

DSS

1

μA

V

DS

= 30V, V

GS

= 0V

Gate-Body Leakage

I

GSS

±10

±1

μA

V

GS

= ±10V, V

DS

= 0V

V

GS

= ±5V, V

DS

= 0V

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

V

GS(th)

0.6

1.2 V

V

DS

= V

GS

, I

D

= 250

μA

Static Drain-Source On-Resistance

R

DS (ON)





2.2
1.5
1.2

Ω

V

GS

= 1.8V, I

D

= 20mA

V

GS

= 2.5V, I

D

= 20mA

V

GS

= 4.0V, I

D

= 100mA

Forward Transconductance

|Y

fs

|

100

mS

V

DS

=10V, I

D

= 0.1A

Source-Drain Diode Forward Voltage

V

SD

0.5

1.4 V

V

GS

= 0V, I

S

= 115mA

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

39

pF

Output Capacitance

C

oss

10

pF

Reverse Transfer Capacitance

C

rss

3.6

pF

V

DS

= 3V, V

GS

= 0V

f = 1.0MHz

Turn-on Time

t

on

11

nS

Switching Time

Turn-off Time

t

off

51

nS

V

DD

= 5V, I

D

= 10 mA,

V

GS

= 0-5V

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.

DMN32D2LDF

Document number: DS31238 Rev. 3 - 2

1 of 4

www.diodes.com

January 2008

© Diodes Incorporated

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