Dmn3200u new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMN3200U User Manual
Page 2: Electrical characteristics
DMN3200U
Document number: DS31188 Rev. 5 - 2
2 of 5
October 2013
© Diodes Incorporated
DMN3200U
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±8 V
Drain Current (Note 5)
I
D
2.2 A
Pulsed Drain Current (Note 5)
I
DM
9 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
650
mW
Thermal Resistance, Junction to Ambient
R
θJA
192
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
30
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
1 µA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
5
µA
V
GS
=
8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.45
1.0 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS (ON)
62
70
150
90
110
200
m
V
GS
= 4.5V, I
D
= 2.2A
V
GS
= 2.5V, I
D
= 2A
V
GS
= 1.5V, I
D
= 0.67A
Forward Transfer Admittance
|Y
fs
|
5
S
V
DS
=5V, I
D
= 2.2A
Diode Forward Voltage (Note 6)
V
SD
0.9 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
290
pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
66
pF
Reverse Transfer Capacitance
C
rss
35
pF
Notes:
5. Device mounted on FR-4 PCB, on minimum recommended pad layout on 2oz. Copper pads.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.