Diodes DMN313DLT - Manual

DMN313DLT
Document number: DS35078 Rev. 2 - 2
1 of 5
www.diodes.com
August 2011
© Diodes Incorporated
DMN313DLT
NEW PROD
UC
T
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= 25°C
30V
2 Ω @ V
GS
= 4V 270mA
3.2 Ω @ V
GS
= 2.5V 210mA
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• Backlighting
• DC-DC
Converters
•
Power management functions
Features and Benefits
• Low
On-Resistance
• Low Input Capacitance
• Fast Switching Speed
•
Low Input/Output Leakage
•
Lead Free By Design/RoHS Compliant (Note 1)
• ESD Protected up to 2kV
•
"Green" Device (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-523
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
•
Weight: 0.002 grams (approximate)
Ordering Information
(Note 3)
Part Number Case Packaging
DMN313DLT-7 SOT-523 3000 / Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016
Code X Y Z A B C D
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT-523
Top View Top View
Pin-Out
ESD PROTECTED TO 2kV
G S
D
Source
Gate
Protection
Diode
Gate
Drain
Equivalent Circuit
NA2 YM
NA2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)