Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN3150L User Manual
Page 2: Dmn3150l
DMN3150L
Document number: DS31126 Rev. 9 - 2
2 of 5
October 2013
© Diodes Incorporated
DMN3150L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
12
V
Drain Current (Note 5) T
A
= +25°C
T
A
= +70°C
I
D
3.8
3.1
A
Drain Current (Note 5)
Pulsed
I
DM
15
A
Body-Diode Continuous Current (Note 5)
I
S
2.0
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
P
D
1.4 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
R
JA
90 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
30
V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
800
nA
V
DS
= 28V, V
GS
= 0V
Gate-Body Leakage
I
GSS
80
800
nA
V
GS
= ±12V, V
DS
= 0V
V
GS
= ±19V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.62
0.92
1.4
V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
39
52
90
54
72
115
mΩ
V
GS
= 10V, I
D
= 3.8A
V
GS
= 4.5V, I
D
= 3.6A
V
GS
= 2.5V, I
D
= 3.1A
Forward Transconductance
|Y
fs
|
3
S
V
DS
= 5V, I
D
= 3.1A
Source-Drain Diode Forward Voltage
V
SD
1.16 V
V
GS
= 0V, I
S
= 2.0A
DYNAMIC CHARACTERISTICS (Note 7)
Gate Resistance
R
g
- 4.17 - Ω
V
DS
=0V, V
GS
= 0V,
f = 1MHz
Total Gate Charge (10V)
Q
g
- 8.2 - nC
V
GS
= 10 V, V
DS
= 10V,
I
D
= 3.8 A
Total Gate Charge (4.5V)
Q
g
- 3.7 - nC
V
GS
=4.5 V, V
DS
= 10V,
I
D
= 3.8 A
Gate-Source Charge
Q
gs
- 0.7 - nC
Gate-Drain Charge
Q
gd
- 1.1 - nC
Turn-On Delay Time
t
D(on)
- 1.14 - ns
V
DD
= 15V, V
GEN
= 10V,
R
GEN
= 6Ω, R
L
= 3.9Ω
Turn-On Rise Time
t
r
- 3.49 - ns
Turn-Off Delay Time
t
D(off)
- 15.02 - ns
Turn-Off Fall Time
t
f
- 3.26 - ns
Input Capacitance
C
iss
305
pF
V
DS
= 5V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
74
pF
Reverse Transfer Capacitance
C
rss
48
pF
Notes:
5. Device mounted on FR-4 PCB. t
≤5 sec.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.