Dmn3067lw new prod uc t advanced information, Maximum ratings, Thermal characteristics – Diodes DMN3067LW User Manual
Page 2: Electrical characteristics, Dmn3067lw

DMN3067LW
Document number: DS36640 Rev. 4 - 2
2 of 6
March 2014
© Diodes Incorporated
DMN3067LW
NEW PROD
UC
T
ADVANCED INFORMATION
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
2.6
2.1
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
10 A
Thermal Characteristics
Characteristic Symbol
Value
Units
Total Power Dissipation
(Note 5)
P
D
0.5
W
(Note 6)
1.1
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
241
°C/W
(Note 6)
130
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30
V
V
GS
= 0V,
I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
1 µA
V
DS
= 30V,
V
GS
= 0V
Gate-Body Leakage
I
GSS
±10
μA
V
GS
=
±12V,
V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.5
1.5 V
V
DS
= V
GS
,
I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
48 67
mΩ
V
GS
= 4.5V,
I
D
=
2.5A
50 70
V
GS
= 4.0V,
I
D
=
2.5A
70 98
V
GS
= 2.5V,
I
D
=
2.5A
Diode Forward Voltage
V
SD
1.2
V
V
GS
= 0V, I
S
= 0.6A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
447
pF
V
DS
= 10V,
V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
54
Reverse Transfer Capacitance
C
rss
41
Gate Resistance
R
G
23
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
Q
g
4.6
nC
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 2.5A
Gate-Source Charge
Q
gs
1.0
Gate-Drain Charge
Q
gd
1.0
Turn-On Delay Time
t
D(on)
3.8
nS
V
DD
= 15V, I
D
= 1.25A,
V
GEN
= 4.5V
,
R
GEN
= 10Ω
Turn-On Rise Time
t
r
5.2
Turn-Off Delay Time
t
D(off)
15
Turn-Off Fall Time
t
f
6.1
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.