Dmn3051l new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMN3051L User Manual
Page 2: Electrical characteristics, Dmn3051l
DMN3051L
Document number: DS31347 Rev. 5 - 2
2 of 6
October 2013
© Diodes Incorporated
DMN3051L
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
4.5
3.5
A
t<5s
T
A
= +25°C
T
A
= +70°C
I
D
5.8
4.9
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
20 A
Maximum Body Diode Forward Current (Note 6)
I
S
2 A
Thermal Characteristics
Characteristic Symbol
Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.7
W
T
A
= +70°C
0.44
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
182
°C/W
t < 5s
109
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.4
W
T
A
= +70°C
0.85
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
JA
94
°C/W
t < 5s
56
Thermal Resistance, Junction to Case (Note 6)
R
JC
25
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
800 nA
V
DS
= 28V, V
GS
= 0V
Gate-Body Leakage
I
GSS
80
800
nA
V
GS
= ±12V, V
DS
= 0V
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.3 1.9 2.2 V
V
DS
= V
GS
, I
D
= 250 µA
Static Drain-Source On-Resistance
R
DS(ON)
33
54
38
64
m
V
GS
= 10V, I
D
= 5.8A
V
GS
= 4.5V, I
D
= 5.0A
Forward Transconductance
|Y
fs
|
5
S
V
DS
= 5V, I
D
= 3.1A
Source-Drain Diode Forward Voltage
V
SD
0.78 1.16 V V
GS
= 0V, I
S
= 2.0A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
424
pF
V
DS
= 5V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
115
pF
Reverse Transfer Capacitance
C
rss
81
pF
Gate Resistance
R
g
1.51
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
9.0
nC
V
GS
= 10V, V
DS
= 15V, I
D
= 5.8A
Gate-Source Charge
Q
gs
1.3
nC
Gate-Drain Charge
Q
gd
1.3
nC
Turn-On Delay Time
t
D(on)
3.4
ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 2.6Ω, R
G
= 3Ω
Turn-On Rise Time
t
r
6.2
ns
Turn-Off Delay Time
t
D(off)
13.9
ns
Turn-Off Fall Time
t
f
2.8
ns
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.