Diodes DMN3029LFG - Manual (Page 2)

POWERDI is a registered trademark of Diodes Incorporated.
DMN3029LFG
Document number: DS35448 Rev. 7 - 2
2 of 7
www.diodes.com
October 2012
© Diodes Incorporated
DMN3029LFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±25 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
5.3
4.2
A
Continuous Drain Current (Note 6) V GS = 10V
Steady
State
T A = +25°C
T A = +70°C
I D
8.0
6.3
A
Continuous Drain Current (Note 6) V
GS
= 10V t
≤ 10s
T
A
= +25°C
T
A
= +70°C
I
D
9.5
7.7
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T A = +70°C
I
D
6.5
4.9
A
Continuous Drain Current (Note 6) V
GS
= 4.5V t
≤ 10s
T
A
= +25°C
T
A
= +70°C
I
D
7.8
6.2
A
Pulsed Drain Current (Note 7) I
DM
70 A
Avalanche Current (Notes 7 & 8) I AR
18 A
Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH E
AR
16 mJ
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 5) P
D
1.0 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5) R θJA 130.6 °C/W
Power Dissipation (Note 6) P
D
2.07 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6) R θJA 62.5 °C/W
Power Dissipation (Note 6) t
≤ 10s
P
D
3.0 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6) t ≤ 10s R
θJA 43.8 °C/W
Operating and Storage Temperature Range T J , T STG
-55 to +150 °C
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.
7. Repetitive rating, pulse width limited by junction temperature.
8. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C.
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
I,
D
R
AIN
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ
T = 150°C
T = 25°C
Single Pulse
J(max)
A
0
50
100
150
200
250
300
350
400
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
0.001 0.01 0.1 1 10 100 1,000 0.0001
P
,
P
EAK
T
R
A
N
SI
E
N
T
P
O
IWE
R
(W
)
(PK)
Single Pulse
R
= 60 C/W
R = r * R
T - T = P * R
θ
θ
θ
θ
JA
JA(t) (t) JA
J A JA(t)
°