Diodes DMN3024LSD - Manual (Page 2)

DMN3024LSD
Document Revision: 3
2 of 8
www.diodes.com
July 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN3024LSD
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source voltage V
DSS
30 V
Gate-Source voltage V
GS
±20 V
Continuous Drain current V
GS
= 10V
(Notes 3 & 5)
I
D
7.2
A
T
A
= 70°C (Notes 3 & 5) 5.8
(Notes 2 & 5) 5.7
(Notes 2 & 6) 6.8
Pulsed Drain current V
GS
= 10V (Notes 4 & 5) I
DM
34 A
Continuous Source current (Body diode) (Notes 3 & 5) I
S
3.3 A
Pulsed Source current (Body diode) (Notes 4 & 5) I
SM
34 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Notes 2 & 5)
P
D
1.3
10.0
W
mW/
°C
(Notes 2 & 6)
1.8
14.3
(Notes 3 & 5)
2.0
15.9
Thermal Resistance, Junction to Ambient
(Notes 2 & 5)
R θJA
100
°C/W (Notes 2 & 6) 70
(Notes 3 & 5) 63
Thermal Resistance, Junction to Lead (Notes 5 & 7) R θJL 53 °C/W
Operating and storage temperature range T
J
, T
STG
-55 to 150 °C
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t
≤ 10 sec.
4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. For a dual device with one active die.
6. For a device with two active die running at equal power.
7. Thermal resistance from junction to solder-point (at the end of the drain lead): the device is operating in a steady-state condition.