Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN3018SSS User Manual
Page 2
DMN3018SSS
Document number: DS35501 Rev. 5 - 2
2 of 6
February 2012
© Diodes Incorporated
DMN3018SSS
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±25 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= 25
°C
T
A
= 70
°C
I
D
7.3
5.7
A
t<10s
T
A
= 25
°C
T
A
= 70
°C
I
D
9.7
7.8
A
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= 25
°C
T
A
= 70
°C
I
D
5.5
4.3
A
t<10s
T
A
= 25
°C
T
A
= 70
°C
I
D
7.6
5.8
A
Pulsed Drain Current (10
μs pulse, duty cycle = 1%)
I
DM
60 A
Maximum Body Diode continuous Current
I
S
2.5 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 4)
T
A
= 25°C
P
D
1.4
W
T
A
= 70°C
0.9
Thermal Resistance, Junction to Ambient (Note 4)
Steady state
R
θJA
90 °C/W
t<10s 50
°C/W
Total Power Dissipation (Note 5)
T
A
= 25°C
P
D
1.7
W
T
A
= 70°C
1.1
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
75 °C/W
t<10s 42
°C/W
Thermal Resistance, Junction to Case (Note 5)
R
θJC
7.6 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V
V
GS
= 0V, I
D
= 250
μA
Zero Gate Voltage Drain Current
I
DSS
- - 1
μA
V
DS
= 24V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- -
±10
μA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
1 1.7 2.1 V
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance
R
DS (ON)
- 15 21
mΩ
V
GS
= 10V, I
D
= 10A
- 20 35
V
GS
= 4.5V, I
D
= 8.5A
Forward Transfer Admittance
|Y
fs
|
- 8.3 - S
V
DS
= 5V, I
D
= 6.9A
Diode Forward Voltage
V
SD
0.5 - 1.2 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
- 697 - pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 97 - pF
Reverse Transfer Capacitance
C
rss
- 67 - pF
Gate resistance
R
g
- 1.47 - Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
- 6.0 - nC
V
GS
= 10V, V
DS
= 15V,
I
D
= 9A
Total Gate Charge (V
GS
= 10V)
Q
g
- 13.2 - nC
Gate-Source Charge
Q
gs
- 2.2 - nC
Gate-Drain Charge
Q
gd
- 1.8 - nC
Turn-On Delay Time
t
D(on)
- 4.3 - ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 15
Ω,I
D
= 1A, R
G
= 6
Ω
Turn-On Rise Time
t
r
- 4.4 - ns
Turn-Off Delay Time
t
D(off)
- 20.1 - ns
Turn-Off Fall Time
t
f
- 4.1 - ns
Reverse Recovery Time
T
rr
- 7.3 - ns
I
F
= 9A, di/dt = 500A/
μs
Reverse Recovery Charge
Q
rr
- 7.9 - nC
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.