Dmn3018sfg new prod uc t, Dmn3018sfg – Diodes DMN3018SFG User Manual
Page 4
DMN3018SFG
Document number: DS35638 Rev. 4 - 2
4 of 6
April 2014
© Diodes Incorporated
DMN3018SFG
NEW PROD
UC
T
0
0.4
0.8
1.2
1.6
2.0
2.4
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J
°
I = 1mA
D
I = 250µA
D
V
, G
A
TE THRE
SHO
LD
VOL
TAG
E
(V
)
GS
(t
h
)
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1.0
1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T (
A
)
S
T = 25°C
A
0
5
10
15
20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
10
100
1,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
pF
)
T
C
iss
f = 1MHz
C
oss
C
rss
0
2
4
6
8
10
12
14
16
Q
(nC)
g
, TOTAL GATE CHARGE
Figure 10 Gate Charge
0
2
4
6
8
10
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
V
= 15V
I = A
DS
D
9
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
r(
t), T
R
A
N
SIE
N
T T
H
E
R
MA
L
R
ES
IS
TA
N
C
E
R
(t) = r(t) * R
R
= 127°C/W
Duty Cycle, D = t1/ t2
θ
θ
θ
JA
JA
JA
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000