Diodes DMN3010LFG - Manual (Page 2)

DMN3010LFG
Document number: DS36195 Rev. 3 - 2
2 of 6
www.diodes.com
June 2014
© Diodes Incorporated
DMN3010LFG
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
11
8.5
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
14
11
A
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
C
= +25°C
T
C
= +100°C
I
D
30
20
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
90 A
Avalanche Current (Notes 6) L = 0.1mH I
AR
24 A
Repetitive Avalanche Energy (Notes 6) L = 0.1mH E
AR
29 mJ
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 4) P
D
0.9 W
Thermal Resistance, Junction to Ambient (Note 4)
Steady State
R
θJA
140 °C/W
t < 10s 90 °C/W
Total Power Dissipation (Note 5) P
D
2.4 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
52 °C/W
t < 10s 35 °C/W
Thermal Resistance, Junction to Case R
θJC
4.8 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current I
DSS
— — 1 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1.0 — 2.5 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS(ON)
— 6.5 8.5
m Ω
V
GS
= 10V, I
D
= 18A
— 8 10.5 V
GS
= 4.5V, I
D
= 16A
Forward Transfer Admittance |Y
fs
| — 20 — S V
DS
= 5V, I
D
= 18A
Diode Forward Voltage V
SD
— 0.75 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 2075 —
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 190 —
Reverse Transfer Capacitance C
rss
— 138 —
Gate resistance R
g
— 2.4 — Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 16.1 —
nC V
DS
= 15V, I
D
= 18A
Total Gate Charge (V
GS
= 10V) Q
g
— 37 —
Gate-Source Charge Q
gs
— 6.1 —
Gate-Drain Charge Q
gd
— 5.9 —
Turn-On Delay Time t
D(on)
— 4.5 —
ns
V
DS
= 15V, V
GS
= 10V,
R
L
= 0.83 Ω, R
GEN
= 3 Ω,
Turn-On Rise Time t
r
— 19.6 —
Turn-Off Delay Time t
D(off)
— 31 —
Turn-Off Fall Time t
f
— 10.7 —
Reverse Recovery Time t
rr
— 13.7 — ns
I
F
=15A, di/dt=500A/µs
Reverse Recovery Charge Q
rr
— 18.3 — nC
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.