Dmg6301udw new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMG6301UDW User Manual
Page 2: Electrical characteristics, Dmg6301udw

DMG6301UDW
Document number: DS36288 Rev. 1 - 2
2 of 6
February 2014
© Diodes Incorporated
DMG6301UDW
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
25 V
Gate-Source Voltage
V
GSS
8 V
Continuous Drain Current, V
GS
=
4.5V (Note 6)
T
A
= +25°C
T
A
= +70°C
I
D
0.24
0.19
A
Continuous Drain Current, V
GS
=
2.7V (Note 6)
T
A
= +25°C
T
A
= +70°C
I
D
0.22
0.17
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
1.5 A
Thermal Characteristics
Characteristic Symbol
Value
Units
Total Power Dissipation
(Note 5)
P
D
0.3
W
(Note 6)
0.37
Thermal Resistance, Junction to Ambient
(Note 5)
R
ΘJA
409
°C/W
(Note 6)
334
Thermal Resistance, Junction to Case
(Note 6)
R
ΘJC
137
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
25
—
— V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
— — 1 µA
V
DS
= 20V, V
GS
= 0V
Gate-Body Leakage
I
GSS
— — 100 nA
V
GS
= 8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.65 0.85 1.5 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS(ON)
— 3.8 4
Ω
V
GS
= 4.5V, I
D
= 0.4A
— 3.1 5
Ω
V
GS
= 2.7V, I
D
= 0.2A
Forward Transconductance
|Y
fs
|
⎯
1
⎯
S
V
DS
= 5V,
I
D
=0.4A
Diode Forward Voltage
V
SD
— 0.76
1.2
V
V
DS
= V
GS
, I
D
= 0.25A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 27.9 —
pF
V
DS
= 10V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
— 6.1 —
Reverse Transfer Capacitance
C
rss
— 2 —
Total Gate Charge
Q
g
— 0.36 —
nC
V
GS
= 4.5V, V
DS
= 5V,
I
D
= 0.2A
Gate-Source Charge
Q
gs
— 0.06 —
Gate-Drain Charge
Q
gd
— 0.04 —
Turn-On Delay Time
t
D(on)
— 2.9 —
nS
V
GS
= 4.5V, V
DS
= 6V
I
D
= 0.5A, R
G
= 50Ω
Turn-On Rise Time
t
r
— 1.8 —
Turn-Off Delay Time
t
D(off)
— 6.6 —
Turn-Off Fall Time
t
f
— 2.3 —
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.