Diodes DMG4466SSSL - Manual (Page 2)

DMG4466SSSL
Document number: DS32244 Rev. 3 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMG4466SSSL
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
10
6
A
Pulsed Drain Current (Note 5) I
DM
60 A
Avalanche Current (Notes 6) I
AR
16 A
Repetitive Avalanche Energy (Notes 6) L = 0.1mH E
AR
12.8 mJ
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
1.42 W
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 5) R
θJA
88.4 °C/W
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current I
DSS
— — 1 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0 1.45 2.4 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
— 15
25 23
33
mΩ
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 7.5A
Forward Transfer Admittance |Y
fs
| — 2.5 — S V
DS
= 5V, I
D
= 10A
Diode Forward Voltage V
SD
— 0.69 1 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 478.9 — pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 96.7 — pF
Reverse Transfer Capacitance C
rss
— 61.4 — pF
Gate Resistance R
g
0.4 1.1 1.6 Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 5.0 8
nC
V
DS
= 15V, V
GS
= 10V, I
D
= 10A
Total Gate Charge (V
GS
= 10V) Q
g
— 10.5 17
Gate-Source Charge Q
gs
— 1.8 — nC
Gate-Drain Charge Q
gd
— 1.6 — nC
Turn-On Delay Time t
D(on)
— 2.9 — ns
V
GS
= 10V, V
DS
= 15V,
R
G
= 3Ω, R
L
= 1.5Ω
Turn-On Rise Time t
r
— 7.9 — ns
Turn-Off Delay Time t
D(off)
— 14.6 — ns
Turn-Off Fall Time t
f
— 3.1 — ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= 25°C
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.