Diodes DMN2400UFB4 - Manual (Page 4)

DMN2400UFB4
Document number: DS32025 Rev. 5 - 2
4 of 6
www.diodes.com
February 2011
© Diodes Incorporated
DMN2400UFB4
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.2
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V)
GS
(T
H
)
I = 250µA
D
I = 1mA
D
0
0.4
0.8
1.2
1.6
2.0
0 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
0.2
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
0
10
20
30
40
50
60
0 5 10 15 20
Fig. 9 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
A
N
C
E (
p
F
)
f = 1MHz
C
iss
C
oss
C
rss
1
10
100
1,000
2 4 6 8 10 12 14 16 18 20
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N-
S
O
U
R
C
E L
E
AKA
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
2 4 6 8 10 12
Fig. 11 Typical Gate-Source Leakage Current
vs. Gate-Source Voltage
V , GATE-SOURCE VOLTAGE (V)
GS
1
10
100
1,000
10,000
100,000
I,
G
A
T
E-
S
O
U
R
C
E L
EAKA
G
E
C
U
R
R
EN
T
(n
A
)
GS
S
T = 150°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = -55°C
A
1
10
100
1,000
10,000
100,000
2 4 6 8 10 12
Fig. 12 Typical Gate-Source Leakage Current
vs. Gate-Source Voltage
V , GATE-SOURCE VOLTAGE (V)
GS
I,
G
A
T
E-
S
O
U
R
C
E L
EAK
A
G
E
C
U
R
R
EN
T
(n
A
)
GS
S
T = 150°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = -55°C
A