Diodes DMN2300UFB4 - Manual (Page 2)

DMN2300UFB4
Document number: DS35269 Rev. 4 - 2
2 of 7
www.diodes.com
September 2012
© Diodes Incorporated
DMN2300UFB4
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
1.30
0.96
A
Pulsed Drain Current (Note 6) I
DM
6 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
500 mW
Thermal Resistance, Junction to Ambient @T A = +25°C R θJA 250 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
20 — — V V GS = 0V, I D = 10µA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1 µA V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — 10 µA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.45 — 0.95 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
— — 175
m Ω
V
GS
= 4.5V, I
D
= 1A
— — 240 V GS = 2.5V, I D = 750mA
— — 360 V
GS
= 1.8V, I
D
= 500mA
— — 500 V
GS
= 1.5V, I
D
= 200mA
Forward Transfer Admittance |Y fs | 40 — — mS V DS = 3V, I D = 30mA
Diode Forward Voltage V
SD
— 0.7 1.2 V V
GS
= 0V, I
S
= 300mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
— 64.3 — pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 6.1 — pF
Reverse Transfer Capacitance C
rss
— 4.5 — pF
Gate Resistance R g
— 70 — Ω V DS = 0V, V GS = 0V, f = 1MHz
Total Gate Charge Q
g
— 1.6 — nC
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 1A
Gate-Source Charge Q
gs
— 0.2 — nC
Gate-Drain Charge Q gd
— 0.2 — nC
Turn-On Delay Time t
D(on)
— 3.5 — ns
V DS = 10V, I D = 1A
V
GS
= 10V, R
G
= 6 Ω
Turn-On Rise Time t
r
— 2.8 — ns
Turn-Off Delay Time t
D(off)
— 38 — ns
Turn-Off Fall Time t
f
— 13 — ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.