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Dmn2230u new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMN2230U User Manual

Page 2: Electrical characteristics

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DMN2230U

Document number: DS31180 Rev. 5 - 2

2 of 5

www.diodes.com

January 2012

© Diodes Incorporated

DMN2230U

NEW PROD

UC

T





Maximum Ratings

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

20 V

Gate-Source Voltage

V

GSS

±12 V

Drain Current (Note 5)

I

D

2.0 A

Pulsed Drain Current (Note 6)

I

DM

7 A




Thermal Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Units

Total Power Dissipation (Note 5)

P

D

600 mW

Thermal Resistance, Junction to Ambient

R

θJA

208 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C




Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

20

V

V

GS

= 0V, I

D

= 10

μA

Zero Gate Voltage Drain Current

I

DSS

1

μA V

DS

= 20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±10

μA V

GS

=

±12V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

0.5

1.0 V

V

DS

= V

CS

, I

D

= 250

μA

Static Drain-Source On-Resistance

R

DS (ON)

81

113
170

110
145
230

m

Ω

V

GS

= 4.5V, I

D

= 2.5A

V

GS

= 2.5V, I

D

= 1.5A

V

GS

= 1.8V, I

D

= 1.0A

Forward Transfer Admittance

|Y

fs

|

5

S

V

DS

= 5V, I

D

= 2.4A

Diode Forward Voltage (Note 7)

V

SD

0.8 1.1 V V

GS

= 0V, I

S

= 1.05A

DYNAMIC CHARACTERISTICS
Input Capacitance

C

iss

188

pF

V

DS

= 10V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

44

pF

Reverse Transfer Capacitance

C

rss

30

pF

Total Gate Charge

Q

g

2.3

nC

V

DS

= 10V, I

D

= 11.6A

Gate-Source Charge

Q

gs

0.3

nC

Gate-Drain Charge

Q

gd

0.5

nC

Turn-On Delay Time

t

d(on)

8

ns

V

DD

= 10V, R

L

= 10

Ω

I

D

= 1A, V

GEN

= 4.5V, R

G

= 6

Ω

Rise Time

t

r

3.8

Turn-Off Delay Time

t

d(off)

19.6

Fall Time

t

f

8.3

Notes:

5. Device mounted on FR-4 PCB, or minimum recommended pad layout
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.