Diodes DMN2065UW - Manual (Page 2)

DMN2065UW
Document number: DS35554 Rev. 1 – 2
2 of 6
www.diodes.com
October 2011
© Diodes Incorporated
DMN2065UW
NEW PROD
UC
T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V GSS
±12 V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
2.8
2.3
A
t<10s
T
A
= 25°C
T A = 70°C
I
D
3.1
2.6
A
Continuous Drain Current (Note 5) V GS = 1.8V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
2.2
1.7
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
2.4
1.9
A
Pulsed Drain Current (10us pulse, duty cycle=1%) I DM
30 A
Maximum Body Diode Forward Current (Note 4) I
S
1.2 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4) P
D
0.43 W
Thermal Resistance, Junction to Ambient (Note 4)
Steady state
R θJA
296 °C/W
t<10s 252 °C/W
Total Power Dissipation (Note 5) P
D
0.7 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θJA
178 °C/W
t<10s 151 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V V
GS
= 0V, I
D
= 1mA
Zero Gate Voltage Drain Current @T
c
= 25°C I
DSS
- - 1 μA V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I GSS
- - ±1 μA V GS = ±10V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.35 - 1.0 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
- 52 56
mΩ
V
GS
= 4.5V, I
D
= 2A
- 59 65 V
GS
= 2.5V, I
D
= 2A
- 60 93 V
GS
= 1.8V, I
D
= 1A
- 75 140 V
GS
= 1.5V, I
D
= 0.5A
Forward Transfer Admittance |Y
fs
| - 7 - S V
DS
= 5V, I
D
= 3.8A
Diode Forward Voltage V
SD
- 0.7 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
- 400.0 - pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 73.8 - pF
Reverse Transfer Capacitance C
rss
- 65.6 - pF
Total Gate Charge Q
g
- 5.4 - nC V
GS
= 4.5V, V
DS
= 10V,
I
D
= 6A Gate-Source Charge Q
gs
- 0.7 - nC
Gate-Drain Charge Q gd
- 1.4 - nC
Turn-On Delay Time t
D(on)
- 3.5 - ns
V DD = 10V, V GS = 5V,
R
L
= 1.7 Ω, R
G
= 6 Ω,
Turn-On Rise Time t
r
- 9.7 - ns
Turn-Off Delay Time t D(off)
- 23.8 - ns
Turn-Off Fall Time t
f
- 7.2 - ns
Notes: 4. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.