Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN2075U User Manual
Page 2: Dmn2075u
DMN2075U
Document number: DS31837 Rev. 4 - 2
2 of 6
October 2013
© Diodes Incorporated
DMN2075U
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
4.2
3.4
A
Pulsed Drain Current (Note 6)
I
DM
27 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 5)
P
D
0.8 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C
R
θJA
156 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
— — 1.0 μA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.4 — 1.0 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
—
25
30
38
45
mΩ
V
GS
= 4.5V, I
D
= 3.6A
V
GS
= 2.5V, I
D
= 3.1A
Forward Transfer Admittance
|Y
fs
|
— 13 — S
V
DS
= 5V, I
D
= 3.6A
Diode Forward Voltage
V
SD
— 0.75 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 594.3 — pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 64.5 — pF
Reverse Transfer Capacitance
C
rss
— 57.7 — pF
Gate Resistance
R
g
— 1.5 — Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
— 7.0 — nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 3.6A
Gate-Source Charge
Q
gs
— 0.9 — nC
Gate-Drain Charge
Q
gd
— 1.4 — nC
Turn-On Delay Time
t
D(on)
— 7.4 — ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 2.78Ω, R
G
= 1.0Ω
Turn-On Rise Time
t
r
— 9.8 — ns
Turn-Off Delay Time
t
D(off)
— 28.1 — ns
Turn-Off Fall Time
t
f
— 6.7 — ns
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.