Diodes DMN2050LFDB - Manual (Page 2)

DMN2050LFDB
Document number: DS36473 Rev. 2 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated
DMN2050LFDB
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V
GSS
±12 V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
3.3
2.6
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
4.5
3.6
A
Maximum Continuous Body Diode Forward Current (Note 6) I
S
1 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) I
DM
25 A
Avalanche Current (Note 7) L = 0.1mH I
AR
9 A
Repetitive Avalanche Energy (Note 7) L = 0.1mH E
AR
4.5 mJ
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.73
W
T
A
= +70°C 0.46
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
173
°C/W
t<10s 110
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.42
W
T
A
= +70°C 0.90
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
89
°C/W t<10s 57
Thermal Resistance, Junction to Case (Note 6) R
θJC
18
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
20 – – V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
– – 1.0 μA V
DS
= 16V, V
GS
= 0V
Gate-Source Leakage I
GSS
– – ±100 nA V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
0.4 – 1.0 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
– 28 45
mΩ
V
GS
= 4.5V, I
D
= 5.0A
– 36 55 V
GS
= 2.5V, I
D
= 4.2A
Forward Transfer Admittance |Y
fs
| – 9 – S V
DS
= 5V, I
D
= 5A
Diode Forward Voltage V
SD
– 0.75 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
– 389 – pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
– 72 – pF
Reverse Transfer Capacitance C
rss
– 63 – pF
Gate Resistance R
g
– 2.1 – Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
– 5.7 – nC
V
DS
= 15V, I
D
= 5.8A
Total Gate Charge (V
GS
= 10V) Q
g
– 12 – nC
Gate-Source Charge Q
gs
– 0.7 – nC
Gate-Drain Charge Q
gd
– 1.5 – nC
Turn-On Delay Time t
D(on)
– 5 – ns
V
DS
= 10V, V
GS
= 4.5V,
R
G
= 6Ω, I
DS
= 1A
Turn-On Rise Time t
r
– 8 – ns
Turn-Off Delay Time t
D(off)
– 25 – ns
Turn-Off Fall Time t
f
– 8 – ns
Reverse Recovery Time t
rr
– 8.5 – ns
I
F
= 5A, di/dt = 100A/μs
Reverse Recovery Charge Q
rr
– 2.1 – nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.