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Dmn2050l new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMN2050L User Manual

Page 2: Electrical characteristics, Dmn2050l

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DMN2050L

Document number: DS31502 Rev. 4 - 2

2 of 6

www.diodes.com

October 2013

© Diodes Incorporated

DMN2050L

NEW PROD

UC

T





Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

20 V

Gate-Source Voltage

V

GSS

±12 V

Drain Current (Note 5)

I

D

5.9 A

Pulsed Drain Current (Note 6)

I

DM

21 A




Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

P

D

1.4

W

Thermal Resistance, Junction to Ambient (Note 5)

R

θJA

90

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

20

V

V

GS

= 0V, I

D

= 250µA

Zero Gate Voltage Drain Current

I

DSS

1 µA

V

DS

= 20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

100

nA

V

GS

=

12V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

0.45

1.4 V

V

DS

= V

GS

, I

D

= 250µA

Static Drain-Source On-Resistance

R

DS(ON)

24
42
68

29
50

100

m

V

GS

= 4.5V, I

D

= 5.0A

V

GS

= 2.5V, I

D

= 3.1A

V

GS

= 2.0V, I

D

= 1.5A

Forward Transfer Admittance

|Y

fs

|

8

S

V

DS

=5V, I

D

= 2.1A

Diode Forward Voltage (Note 7)

V

SD

0.9 1.4 V

V

GS

= 0V, I

S

= 2.0A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

532

pF

V

DS

= 10V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

144

pF

Reverse Transfer Capacitance

C

rss

117

pF

Gate Resistance

R

G



1.3



V

DS

= 0V, V

GS

= 0V, f = 1.0MHz

SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge

Q

g



6.7



nC

V

DS

= 10V, V

GS

= 4.5V, I

D

= 5.0A

Gate-Source Charge

Q

gs



0.8



V

DS

= 10V, V

GS

= 4.5V, I

D

= 5.0A

Gate-Drain Charge

Q

gd



3.0



V

DS

= 10V, V

GS

= 4.5V, I

D

= 5.0A

Notes:

5. Device mounted on FR-4 PCB, on 2oz Copper pad layout with R

θJA

= 90°C/W.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8.

Guaranteed by design. Not subject to production testing.