Dmn2041l new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMN2041L User Manual
Page 2: Electrical characteristics, Dmn2041l
DMN2041L
Document number: DS31962 Rev. 2 - 2
2 of 6
October 2013
© Diodes Incorporated
DMN2041L
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
6.4
4.5
A
Pulsed Drain Current (Note 6)
I
DM
30 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 5)
P
D
0.78 W
Thermal Resistance, Junction to Ambient @ T
A
= +25°C
R
θJA
161 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= 25°C
I
DSS
— — 1.0 µA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.5 — 1.2 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
—
20
26
28
41
mΩ
V
GS
= 4.5V, I
D
= 6.0A
V
GS
= 2.5V, I
D
= 5.2A
Forward Transfer Admittance
|Y
fs
|
—
6 — S
V
DS
= 10V, I
D
= 6A
Diode Forward Voltage
V
SD
—
0.7 1.2 V
V
GS
= 0V, I
S
= 1.7A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
550
—
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
88
—
Reverse Transfer Capacitance
C
rss
—
81
—
Gate Resistance
R
g
—
1.34
—
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (10V)
Q
g
—
15.6
—
nC
V
GS
= 10V, V
DS
= 10V, I
D
= 6A
Total Gate Charge (4.5V)
Q
g
—
7.2
—
nC
V
GS
= 4.5V, V
DS
= 10V, I
D
= 6A
Gate-Source Charge
Q
gs
—
1.0
—
Gate-Drain Charge
Q
gd
—
1.9
—
Turn-On Delay Time
t
D(on)
—
4.69
—
ns
V
DD
= 10V, V
GEN
= 4.5V,
R
GEN
= 1Ω, I
D
= 6.7A
Turn-On Rise Time
t
r
—
13.19
—
Turn-Off Delay Time
t
D(off)
—
22.10
—
Turn-Off Fall Time
t
f
—
6.43
—
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.