Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN2029USD User Manual
Page 2
DMN2029USD
Document number: DS36127 Rev. 3 - 2
2 of 6
May 2013
© Diodes Incorporated
DMN2029USD
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
5.8
4.7
A
t < 10s
T
A
= +25°C
T
A
= +70°C
I
D
6.9
5.7
A
Maximum Body Diode Forward Current (Note 6)
I
S
2.1 A
Pulsed Drain Current (10
s pulse, duty cycle = 1%)
I
DM
30 A
Avalanche Current (Note 7) L = 0.1mH
I
AS
15 A
Avalanche Energy (Note 7) L = 0.1mH
E
AS
11.2 mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.2
W
T
A
= +70°C
0.7
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θ
JA
115
°C/W
t < 10s
70
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.4
W
T
A
= +70°C
0.9
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
95
°C/W
t < 10s
60
Thermal Resistance, Junction to Case (Note 6)
R
θJC
14.5
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
— — 1 µA
V
DS
= 16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
0.6 — 1.5 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS(ON)
—
14 25
mΩ
V
GS
= 4.5V, I
D
= 6.5A
—
19 35
V
GS
= 2.5V, I
D
= 5.4A
Forward Transfer Admittance
|Y
fs
|
—
10 — S
V
DS
= 5V, I
D
= 6.5A
Diode Forward Voltage
V
SD
—
0.7 1.2 V
V
GS
= 0V, I
S
= 1.3A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
—
1171
—
pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
—
133
—
Reverse Transfer Capacitance
C
rss
—
110
—
Gate Resistance
R
G
—
1.2
—
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
—
10.4
—
nC
V
DS
= 10V, I
D
= 3A
Total Gate Charge (V
GS
= 8V)
Q
g
—
18.6
—
Gate-Source Charge
Q
gs
—
1.9
—
Gate-Drain Charge
Q
gd
—
2.3
—
Turn-On Delay Time
t
D(on)
—
16.5
—
nS
V
GS
= 4.5V, V
DD
= 10V, R
GEN
= 6Ω,
I
D
= 1A
Turn-On Rise Time
t
r
—
33.3
—
Turn-Off Delay Time
t
D(off)
—
119.3
—
Turn-Off Fall Time
t
f
—
53.5
—
Body Diode Reverse Recovery Time
t
rr
—
7.5
—
nS
I
S
= 6.5A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Q
rr
—
2.0
—
nC
I
S
= 6.5A, dI/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.