Dmn2028ufdh – Diodes DMN2028UFDH User Manual
Page 4
POWERDI is a registered trademark of Diodes Incorporated.
DMN2028UFDH
Document number: DS35805 Rev. 5 - 2
4 of 6
January 2013
© Diodes Incorporated
DMN2028UFDH
0.2
0.4
0.6
0.8
1.2
1.4
1.0
0
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J
°
I = 1mA
D
I = 250µA
D
12
16
20
0
4
8
0
0.2
0.4
0.6
0.8
1.0
1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
0
2
4
6
8
10 12 14
16
18 20
1,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
pF
)
T
100
10
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
C
iss
C
oss
C
rss
f = 1MHz
100
0.1
1
10
100
V , DRAIN-SOURCE VOLTAGE (V)
Figure 10 SOA, Safe Operation Area
DS
R
Limited
DS(ON)
10
1
0.1
0.01
0.001
T
= 150°C
T = 25
J(MAX)
A
°C
Single Pulse
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
I
, DR
AIN CU
RRENT
(
A
)
D
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
0.001
r(t
),
T
R
ANS
IEN
T
T
H
E
R
MA
L
R
ESI
S
TAN
C
E
0.01
0.1
1
R
(t) = r(t) * R
R
= 120°C/W
Duty Cycle, D = t1/ t2
θ
θ
θ
JA
JA
JA
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse