Diodes DMN2022UFDF - Manual (Page 2)

DMN2022UFDF
D atasheet number: DS36744 Rev. 1 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMN2022UFDF
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
7.9
6.3
A
t<5s
T
A
= +25°C
T
A
= +70°C
I
D
9.4
7.5
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) I
DM
40 A
Continuous Source-Drain Diode Current T
A
= +25°C I
S
2 A
Avalanche Current (Note 7) L = 0.1mH I
AS
12 A
Avalanche Energy (Note 7) L = 0.1mH E
AS
8 mJ
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.66
W
T
A
= +70°C 0.42
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
188
°C/W
t<5s 135
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.03
W
T
A
= +70°C 1.31
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
60
°C/W t<5s 43
Thermal Resistance, Junction to Case (Note 6) Steady state R
θJC
8.3
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1 µA V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±10 µA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
0.5 — 1.0 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
—
15 22
mΩ
V
GS
= 4.5V, I
D
= 4A
18 26 V
GS
= 2.5V, I
D
= 4A
24 36 V
GS
= 1.8V, I
D
= 4A
35 50 V
GS
= 1.5V, I
D
= 4A
Forward Transfer Admittance |Y
fs
| — 18 — S V
DS
= 5V, I
D
= 12A
Diode Forward Voltage V
SD
— 0.7 1.0 V V
GS
= 0V, I
S
= 5A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 907 —
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 98 —
Reverse Transfer Capacitance C
rss
— 38 —
Gate Resistance R
g
— 194 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 9.8 —
nC V
DS
= 10V, I
D
= 6.5A
Total Gate Charge (V
GS
= 8V) Q
g
— 18 —
Gate-Source Charge Q
gs
— 1.5 —
Gate-Drain Charge Q
gd
— 1.8 —
Turn-On Delay Time t
D(on)
— 56 —
ns
V
DS
= 10V, V
GS
= 4.5V,
R
G
= 6Ω, R
L
= 10Ω,I
D
= 1A
Turn-On Rise Time t
r
— 87 —
Turn-Off Delay Time t
D(off)
— 632 —
Turn-Off Fall Time t
f
— 239 —
Reverse Recovery Time t
rr
— 143 — ns I
F
= 4A, di/dt = 100A/μs
Reverse Recovery Charge Q
rr
—- 136 — nC I
F
= 4A, di/dt = 100A/μs
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.