Maximum ratings, Thermal characteristics, Electrical characteristics n-channel – q1 – Diodes DMN2020UFCL User Manual
Page 2

DMN2020UFCL
Document number: DS36541 Rev. 3 – 2
2 of 6
www.diodes.com
December 2013
© Diodes Incorporated
DMN2020UFCL
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±10 V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
9
7.1
A
Pulsed Drain Current (Note 7)
I
DM
45 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Power Dissipation (Note 5)
P
D
0.61 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
R
θJA
205 °C/W
Power Dissipation (Note 6)
P
D
2.0 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6)
R
θJA
62 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics N-CHANNEL – Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
— — 1.0 μA
V
DS
= 16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — 10 μA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
0.4 — 0.9 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
—
10
12
14
14
20
26
mΩ
V
GS
= 4.5V, I
D
= 9A
V
GS
= 2.5V, I
D
= 7.5A
V
GS
= 1.8V, I
D
= 7A
Diode Forward Voltage
V
SD
— 0.7 1.2 V
V
GS
= 0V, I
S
= 1.6A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
—
1788 — pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
162 — pF
Reverse Transfer Capacitance
C
rss
—
150 —
pF
Gate Resistance
R
g
—
1.36
—
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
—
21.5 —
nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 3A
Gate-Source Charge
Q
gs
—
2.2
—
nC
Gate-Drain Charge
Q
gd
—
2.3 —
nC
Turn-On Delay Time
t
D(on)
—
3.8
—
ns
V
DD
= 10V, V
GS
= 4.5V, I
D
= 4A
R
G
= 2Ω
Turn-On Rise Time
t
r
—
5.7 —
ns
Turn-Off Delay Time
t
D(off)
—
33
—
ns
Turn-Off Fall Time
t
f
—
6.8 —
ns
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.