Diodes DMN2019UTS User Manual
Dmn2019uts new prod uc t, Product summary, Description

DMN2019UTS
Document number: DS35556 Rev. 2 - 2
1 of 6
December 2012
© Diodes Incorporated
DMN2019UTS
NEW PROD
UC
T
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= 25°C
20V
18.5mΩ @ V
GS
= 10V
5.4 A
21mΩ @ V
GS
= 4.5V
5.0 A
24mΩ @ V
GS
= 2.5V
4.6 A
31mΩ @ V
GS
= 1.8V
3.5 A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
•
Power management functions
• Load
Switch
Features
• Low
On-Resistance
•
Low Input Capacitance
•
Fast Switching Speed
•
ESD Protected up to 2KV
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case:
TSSOP-8
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram Below
•
Weight: 0.039 grams (approximate)
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMN2019UTS-13
TSSOP-8
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
8
7
6
5
1
2
3
4
D
S1
S1
G1
D
S2
S2
G2
ESD PROTECTED TO 2kV
G1
S1
S2
G2
D
D
N-Channel
N-Channel
Top View
Bottom View
Top View
Pin Configuration
Internal Schematic
TSSOP-8
Top View
Logo
Part no
Year: “12” = 2012
Xth week : 01~53
1
4
8
5
N2019U
YY WW