Diodes DMN2016LFG - Manual (Page 2)

DMN2016LFG
Document number: DS32053 Rev. 3 - 2
2 of 6
www.diodes.com
January 2012
© Diodes Incorporated
DMN2016LFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V DSS
20 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current (Note 4)
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
5.2
4.1
A
Pulsed Drain Current ( 10 μs pulse, duty cycle = 1% ) I
DM
30 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
0.77 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 4) R θJA 169 °C/W
Thermal Resistance, Junction to Case @T
A
= 25°C (Note 4) R θJC 15.8 °C/W
Operating and Storage Temperature Range T J , T STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V V
GS
= 0V, I
D
= 250 μA
Gate-Source Breakdown Voltage BV
GSO
±8 - - V V DS = 0V, I G = ±250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 1.0
μA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±10 μA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
0.4 0.71 1.1 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
-
13 18
mΩ
V GS = 4.5V, I D = 6A
13.5 19 V
GS
= 4.0V, I
D
= 6A
14 20.5 V
GS
= 3.1V, I
D
= 6A
15 22 V GS = 2.5V, I D = 6A
21 30 V
GS
= 1.8V, I
D
= 6A
Forward Transfer Admittance |Y
fs
| - 25 - S V
DS
= 5V, I
D
= 6A
Diode Forward Voltage V
SD
- 0.75 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C
iss
- 1472 - pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 311 - pF
Reverse Transfer Capacitance C
rss
- 141 - pF
Gate Resistance R
g
- 1.46 - Ω V
DS
=0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
- 16.0 - nC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 6A
Gate-Source Charge Q
gs
- 36.6 - nC
Gate-Drain Charge Q
gd
- 2.1 - nC
Turn-On Delay Time t
D(on)
- 2.6 - ns
V
DD
= 10V, V
GS
= 5V,
R
GEN
= 3 Ω, R
L
= 1.7 Ω
Turn-On Rise Time t r
- 13.2 - ns
Turn-Off Delay Time t
D(off)
- 84.5 - ns
Turn-Off Fall Time t
f
- 46.8 - ns
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
5. Repetitive rating, pulse width limited by junction temperature
6. Guaranteed by design. Not subject to product testing