Dmn2005ufg – Diodes DMN2005UFG User Manual
Page 4
POWERDI is a registered trademark of Diodes Incorporated
.
DMN2005UFG
Document number: DS36943 Rev. 2 - 2
4 of 7
May 2014
© Diodes Incorporated
DMN2005UFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
ADVANCED INFORMATION
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AI
N
-S
O
U
R
CE
O
N-
R
ES
IST
A
NCE
(
)
DS
(O
N)
Ω
0.002
0.003
0.004
0.005
0.006
0
5
10
15
20
25
30
V
= 2.5V
GS
V
= 4.5V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristic
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
TA
N
C
E (
)
DS
(O
N)
Ω
0.003
0.004
0.005
0.006
0.007
0.008
0.009
0.01
0
2
4
6
8
10
I = 13.5A
D
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AI
N
-S
O
U
R
CE
O
N-
R
ES
IST
A
NCE
(
)
DS
(O
N)
Ω
0
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 4.5V
GS
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N-
S
O
U
R
C
E
ON-
R
ES
IST
A
NCE
(
N
ORM
A
L
IZ
E
D)
DS
(O
N)
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100 125 150
V
= 4.5V
I = 13.5A
GS
D
V
=
V
I = 13.5A
GS
D
2.5
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ES
IS
TAN
C
E (
)
DS
(O
N)
Ω
0.002
0.003
0.004
0.005
0.006
0.007
0.008
-50
-25
0
25
50
75
100
125 150
V
= .5V
I = 13.5A
GS
D
2
V
=
V
I = 13.5A
GS
D
2.5
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
0
0.2
0.4
0.6
0.8
1
-50
-25
0
25
50
75
100
125 150
I = 1mA
D
I = 250µA
D