Diodes DMN2005LPK - Manual (Page 2)

DMN2005LPK
Document number: DS30836 Rev. 9 - 2
2 of 6
www.diodes.com
June 2012
© Diodes Incorporated
DMN2005LPK
Maximum Ratings
(@T
A
= 25°C unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V GSS
±10 V
Drain Current per element (Note 5) I
D
440 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) P
D
450 mW
Thermal Resistance, Junction to Ambient R θJA 218 °C/W
Operating and Storage Temperature Range T j , T STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= 25°C unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
20 ⎯ ⎯ V V
GS
= 0V, I
D
= 100
μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 10 µA V
DS
= 17V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±5 µA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.53 ⎯ 1.2 V V
DS
= V
GS
, I
D
= 100 μA
Static Drain-Source On-Resistance R
DS (ON)
⎯
⎯
⎯
⎯
⎯
0.35
0.4
0.45
0.55
0.65
1.5
1.7
1.7
3.5
3.5
Ω
V
GS
= 4V, I
D
= 10mA
V GS = 2.7V, I D = 200mA
V
GS
= 2.5V, I
D
= 10mA
V
GS
= 1.8V, I
D
= 200mA
V
GS
= 1.5V, I
D
= 1mA
Forward Transfer Admittance |Y
fs
| 40 ⎯ ⎯ mS V
DS
= 3V, I
D
= 10mA
Notes: 5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.