Dmn2004wk maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMN2004WK User Manual
Page 2
DMN2004WK
Document number: DS30934 Rev. 5 - 2
2 of 6
September 2013
© Diodes Incorporated
DMN2004WK
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
20
V
Gate-Source Voltage
V
GSS
±8 V
Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
540
390
mA
Pulsed Drain Current (Note 6)
I
DM
1.5 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
200
mW
Thermal Resistance, Junction to Ambient
R
JA
625
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Notes:
5. Device mounted on FR-4 PCB.
6. Pulse width
10S, Duty Cycle 1%.
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20
V
V
GS
= 0V, I
D
= 10
A
Zero Gate Voltage Drain Current
I
DSS
1
μA
V
DS
= 16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
1
μA
V
GS
=
4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.5
1.0
V
V
DS
= V
GS
, I
D
= 250
A
Static Drain-Source On-Resistance
R
DS (ON)
0.4
0.5
0.7
0.55
0.70
0.9
Ω
V
GS
= 4.5V, I
D
= 540mA
V
GS
= 2.5V, I
D
= 500mA
V
GS
= 1.8V, I
D
= 350mA
Forward Transfer Admittance
|Y
fs
|
200
ms
V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage (Note 7)
V
SD
0.5
1.4 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS(Note 8)
Input Capacitance
C
iss
150
pF
V
DS
= 16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
25
pF
Reverse Transfer Capacitance
C
rss
20
pF
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.