Diodes DMN2005DLP4K - Manual (Page 2)

DMN2005DLP4K
Document number: DS30801 Rev. 9 - 2
2 of 5
www.diodes.com
June 2012
© Diodes Incorporated
DMN2005DLP4K
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V
GSS
±10 V
Drain Current per element (Note 5) Continuous
Pulsed (Note 6)
I
D
300
350
mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) P
D
400 mW
Thermal Resistance, Junction to Ambient R θJA 231 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-65 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (per element) (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20 ⎯ ⎯ V V
GS
= 0V, I
D
= 100
μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 10
μA
V
DS
= 17V, V
GS
= 0V
Gate-Source Leakage I GSS
⎯ ⎯ ±5 μA
V GS =
±8V, V
DS = 0V
ON CHARACTERISTICS (per element) (Note 7)
Gate Threshold Voltage
V
GS(th)
0.53 ⎯ 0.9 V V
DS
= V
GS
, I
D
= 100 μA
Static Drain-Source On-Resistance R
DS (ON)
⎯
⎯
⎯
⎯
⎯
0.35
0.4
0.45
0.55
0.65
1.5
1.7
1.7
3.5
3.5
Ω
V GS = 4V, I D = 10mA
V
GS
= 2.7V, I
D
= 200mA
V
GS
= 2.5V, I
D
= 10mA
V
GS
= 1.8V, I
D
= 200mA
V
GS
= 1.5V, I
D
= 1mA
Forward Transfer Admittance ⏐Y
fs
⏐ 40 ⎯ ⎯ mS V
DS
= 3V, I
D
= 10mA
Notes: 5. Device mounted on FR-4 PCB.
6. Pulse width
≤10μS, Duty Cycle ≤1%.
7. Short duration pulse test used to minimize self-heating effect.
0
0.5
1.0
1.5
2.0
0 1 2 3 4 5
Figure 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D V = 1.5V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 4.5V
GS
V = 1.2V
GS
V = 1.8V
GS
0
0.5
1.0
1.5
0 0.5 1 1.5 2 2.5 3
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
Figure 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A