Diodes DMN1025UFDB - Manual (Page 2)

DMN1025UFDB
Document number: DS36668 Rev. 2 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMN1025UFDB
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
12 V
Gate-Source Voltage V
GSS
±10 V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
6.9
5.5
A
t < 5s
T
A
= +25°C
T
A
= +70°C
I
D
8.8
7.0
A
Maximum Continuous Body Diode Forward Current (Note 5) I
S
1 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) I
DM
35 A
Avalanche Current (Note 6) L = 0.1mH I
AS
9.8 A
Avalanche Energy (Note 6) L = 0.1mH E
AS
4.8 mJ
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Steady State
P
D
1.7
W
t < 5s 2.9
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
71
°C/W t < 5s 43
Thermal Resistance, Junction to Case (Note 5) R
θJC
13
Operating and Storage Temperature Range T
J,
T
STG
-55 to 150 °C
Electrical Characteristics N-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
12 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1.0 μA V
DS
= 12V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±10 μA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.4 — 1 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
— 18 25
mΩ
V
GS
= 4.5V, I
D
= 5.2A
— 20 30 V
GS
= 2.5V, I
D
= 4.8A
— 25 38 V
GS
= 1.8V, I
D
= 2.5A
Diode Forward Voltage V
SD
— 0.7 1.2 V V
GS
= 0V, I
S
= 5.4A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 917 — pF
V
DS
= 6V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 120 — pF
Reverse Transfer Capacitance C
rss
— 102 — pF
Gate Resistance R
g
— 11.4 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
— 12.6 — nC
V
DS
= 10V, I
D
= 6.8A
Total Gate Charge (V
GS
= 8V) — 23.1 — nC
Gate-Source Charge Q
gs
— 1.3 — nC
Gate-Drain Charge Q
gd
— 1.6 — nC
Turn-On Delay Time t
D(on)
— 3.0 — ns
V
DD
= 6V, V
GS
= 4.5V,
R
L
= 1.1Ω, R
G
= 1Ω
Turn-On Rise Time t
r
— 9.3 — ns
Turn-Off Delay Time t
D(off)
— 17.2 — ns
Turn-Off Fall Time t
f
— 2.8 — ns
Body Diode Reverse Recovery Time trr — 6.8 — nS I
S
= 5.4A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr — 1.1 — nC I
S
= 5.4A, dI/dt = 100A/μs
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°C
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.