Diodes DMG9926UDM - Manual (Page 2)

DMG9926UDM
Document number: DS31770 Rev. 4 - 2
2 of 6
www.diodes.com
June 2009
© Diodes Incorporated
DMG9926UDM
NEW PROD
UC
T
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
STATIC CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
20 ⎯ ⎯ V I
D
= 250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current I DSS
⎯ ⎯ 1 μA
V DS = 20V, V GS = 0V
Gate-Body Leakage Current I GSS
⎯ ⎯ ±100 nA V DS = 0V, V GS =
±8V
Gate Threshold Voltage V
GS(th)
0.5 ⎯ 0.9 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance (Note 5) R DS (ON)
⎯
22
25
31 28
32
40
m Ω
V
GS
= 4.5V, I
D
= 8.2A
V GS = 2.5V, I D = 3.3A
V GS = 1.8V, I D = 2.0A
Forward Transfer Admittance |Y FS |
⎯ 7 ⎯ S V DS = 10V, I D = 4A
Diode Forward Voltage (Note 5) V
SD
⎯ 0.7 0.9 V I
S
= 2.25A, V
GS
= 0V
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C
iss
⎯ 856 ⎯ pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 83 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 78 ⎯ pF
Gate Resisitance R
G
⎯ 1.32 ⎯ Ω V
GS
= 0V, V
DS
= 0V, f = 1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge Q
g
⎯ 8.3 ⎯ nC
V
GS
= 4.5V, V
DS
= 10V, I
D
= 8.2A Gate-Source Charge Q
gs
⎯ 1.3 ⎯ nC
Gate-Drain Charge Q
gd
⎯ 3.1 ⎯ nC
Turn-On Delay Time t
D(on)
⎯ 8.4 ⎯ ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 10 Ω, R
G
= 6 Ω
Turn-On Rise Time t
r
⎯ 8.2 ⎯ ns
Turn-Off Delay Time t
D(off)
⎯ 40.4 ⎯ ns
Turn-Off Fall Time t f
⎯ 8.9 ⎯ ns
Notes: 5. Test pulse width t = 300ms.
6. Guaranteed by design. Not subject to production testing.
0 0.4 0.8 1.2 1.6 2
0
5
10
15
20
25
30
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
V = 1.5V
GS
V = 2.5V
GS
V = 4.5V
GS
V = 8.0V
GS
V = 2.0V
GS
V = 3.0V
GS
0.5 1 1.5 2
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
0
4
8
12
16
20
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A