Diodes DMG9926USD - Manual (Page 4)

DMG9926USD
Document number: DS31757 Rev. 5 - 2
4 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMG9926USD
NEW PROD
UC
T
0
0.2
0.4
0.6
0.8
1.0
1.2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, GA
T
E
T
HRES
H
OL
D V
O
LT
AGE (
V
)
GS
(T
H
)
I = 1mA
D
I = 250µA
D
0.01
0.1
1
10
0.4 0.5 0.6 0.7 0.8 0.9 1
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A
0 5 10 15 20
Fig. 9 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
, C
A
P
A
C
IT
AN
C
E (
pF
)
10
100
1,000
10,000
f = 1MHz
C
iss
C
oss
C
rss
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
0.1
1
10
100
1,000
10,000
0 2 4 6 8 10 12 14 16 18 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
-S
O
U
R
C
E L
E
A
K
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
0.001
0.01
0.1
1
r(t),
T
R
ANSI
EN
T
T
H
E
R
MA
L
R
ESI
S
TAN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2

R (t) = r(t) *
JA
R
R = 99°C/W


JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9