Diodes DMG8822UTS User Manual
Dmg8822uts new prod uc t, Features, Mechanical data
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
1 of 6
June 2009
© Diodes Incorporated
DMG8822UTS
NEW PROD
UC
T
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low
On-Resistance
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Lead Free By Design/RoHS Compliant (Note 3)
•
"Green" Device (Note 4)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
TSSOP-8L
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminal Connections: See Diagram Below
•
Marking Information: See Page 4
•
Ordering Information: See Page 4
•
Weight: 0.039 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 1)
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
4.9
3.9
A
Pulsed Drain Current (Note 2)
I
DM
31 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 1)
P
D
0.87 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C
R
θJA
143 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes:
1. Device mounted on FR-4 PCB with minimum recommended pad layout.
2. Repetitive rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our webs
TOP VIEW
Internal Schematic
BOTTOM VIEW
Top View
Pin Configuration
8
7
6
5
1
2
3
4
D
S1
S1
G1
D
S2
S2
G2
G1
S1
S2
G2
D1
D2