Diodes DMG6968U - Manual

DMG6968U
Document number: DS31738 Rev. 6 - 2
1 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMG6968U
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
 Low On-Resistance
 25mΩ @ V
GS
= 4.5V
 29mΩ @ V
GS
= 2.5V
 36mΩ @ V
GS
= 1.8V
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 ESD Protected Up To 2kV
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
 PPAP Capable (Note 4)
Mechanical Data
 Case: SOT23
 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish — Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
 Terminals Connections: See Diagram Below
 Weight: 0.008 grams (approximate)
Ordering Information
(Note 5)
Part Number Compliance Case Packaging
DMG6968U-7 Standard SOT23 3000/Tape & Reel
DMG6968UQ-7 Automotive SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View Internal Schematic Top View
D
G S
ESD PROTECTED TO 2kV
Source
Gate
Protection
Diode
Gate
Drain
2N4 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September) 2N4
YM
Chengdu A/T Site Shanghai A/T Site
e3
2N4
YM
Y
YM