Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMG1012UW User Manual
Page 2: Dmg1012uw

DMG1012UW
Document number: DS31859 Rev. 3 - 2
2 of 6
September 2013
© Diodes Incorporated
DMG1012UW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
20
V
Gate-Source Voltage
V
GSS
±6
V
Continuous Drain Current (Note 5)
Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
1.0
0.64
A
Pulsed Drain Current (Note 6)
I
DM
6
A
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Power Dissipation (Note 3)
P
D
0.29
W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 3)
R
θJA
425
°C/W
Operating and Storage Temperature Range
T
J
,
T
STG
-55 to +150
°C
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20
-
-
V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= 25°C
I
DSS
-
-
100
nA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
-
-
±1.0
μA
V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.5
-
1.0
V
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance
R
DS (ON)
-
0.3
0.45
Ω
V
GS
= 4.5V, I
D
= 600mA
0.4
0.6
V
GS
= 2.5V, I
D
= 500mA
0.5
0.75
V
GS
= 1.8V, I
D
= 350mA
Forward Transfer Admittance
|Y
fs
|
-
1.4
-
S
V
DS
= 10V, I
D
= 400mA
Diode Forward Voltage
V
SD
-
0.7
1.2
V
V
GS
= 0V, I
S
= 150mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
-
60.67
-
pF
V
DS
= 16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
-
9.68
-
pF
Reverse Transfer Capacitance
C
rss
-
5.37
-
pF
Total Gate Charge
Q
g
-
736.6
-
pC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
Q
gs
-
93.6
-
pC
Gate-Drain Charge
Q
gd
-
116.6
-
pC
Turn-On Delay Time
t
D(on)
-
5.1
-
ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47
Ω, R
G
= 10
Ω,
I
D
= 200mA
Turn-On Rise Time
t
r
-
7.4
-
ns
Turn-Off Delay Time
t
D(off)
-
26.7
-
ns
Turn-Off Fall Time
t
f
-
12.3
-
ns
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.