Diodes FZT705 User Manual
Fzt705
SOT223 PNP SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 2 - OCTOBER 1995
FEATURES
* 2A CONTINUOUS CURRENT
* FAST SWITCHING
* GUARANTEED HFE SPECIFIED UP TO 2A
COMPLEMENTARY TYPE FZT 605
PART MARKING DETAIL
FZT705
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-140
V
Collector-Emitter Voltage
V
CEO
-120
V
Emitter-Base Voltage
V
EBO
-10
V
Peak Pulse Current
I
CM
-4
A
Continuous Collector Current
I
C
-2
A
Power Dissipation
P
TOT
2
W
Operating and Storage Temperature Range
tj:tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Breakdown Voltages
V
(BR)CBO
-140
V
I
C
=-100mA
V
(BR)CEO
-120
V
I
C
=-10mA*
V
(BR)EBO
-10
V
I
E
=-100
µ
A
Collector Cut-Off
Current
I
CBO
-0.1
-10
µ
A
µ
A
V
CB
=-120V
V
CB
=-120V, T
amb
=100°C
I
CES
-10
µ
A
V
CES
=-80V
Emitter Cut-Off Current
I
EBO
-0.1
µ
A
V
EB
=-8V
SaturationVoltages
V
CE(sat)
-1.3
-2.5
V
V
I
C
=-1A, I
B
=-1mA
I
C
=-2A, I
B
=-2mA
V
BE(sat)
-1.8
V
I
C
=-1A, I
B
=-10mA
Base-Emitter Turn-On
Voltage
V
BE(on)
-1.7
V
I
C
=-1A, V
CE
=-5V
Static Forward Current
Transfer
h
FE
3000
3000
3000
2000
30000
I
C
=-10mA, V
CE
=-5V
I
C
=-100mA, V
CE
=-5V
I
C
=-1A, V
CE
=-5V
I
C
=-2A, V
CE
=-5V
Transitional
Frequency
f
T
160
MHz
I
C
=-100mA, V
CE
=-10V
f=20MHz
Output Capacitance
C
obo
15
pF
V
EB
=-10V, f=1MHz
Switching Times
T
on
0.6
µ
s
I
C
=-0.5A, V
CE
=-10V
I
B1
=I
B2
=0.5mA
T
off
0.8
µ
s
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FZT705
C
C
E
B
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